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| MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MCM6341/D Advance Information MCM6341 128K x 24 Bit Static Random Access Memory The MCM6341 is a 3,145,728-bit static random access memory organized as 131,072 words of 24 bits. Static design eliminates the need for external clocks or timing strobes. The MCM6341 is equipped with chip enable (E1, E2, E3) and output enable (G) pins, allowing for greater system flexibility and eliminating bus contention problems. The MCM6341 is available in a 119-bump PBGA package. * * * * * * * Single 3.3 V 10% Power Supply Fast Access Time: 10/11/12/15 ns Equal Address and Chip Enable Access Time All Inputs and Outputs are TTL Compatible Three-State Outputs Power Operation: 280/275/270/260 mA Maximum, Active AC Commercial Temperature (0C to 70C) and Industrial Temperature (- 40C to + 85C) Options BLOCK DIAGRAM A A A A A A A A A ROW DECODER ZP PACKAGE PBGA CASE 999-02 PIN NAMES A . . . . . . . . . . . . . . . . . . . . . . Address Inputs W . . . . . . . . . . . . . . . . . . . . . . . Write Enable G . . . . . . . . . . . . . . . . . . . . . Output Enable E1, E2, E3 . . . . . . . . . . . . . . . . Chip Enable DQ . . . . . . . . . . . . . . . . . Data Input/Output NC . . . . . . . . . . . . . . . . . . . . No Connection VDD . . . . . . . . . . . . . + 3.3 V Power Supply VSS . . . . . . . . . . . . . . . . . . . . . . . . . Ground MEMORY MATRIX DQ INPUT DATA CONTROL DQ A E1 E2 E3 W G A A COLUMN I/O COLUMN DECODER A A A A A DQ DQ This document contains information on a new product. Specifications and information herein are subject to change without notice. REV 2 2/18/98 (c) Motorola, Inc. 1998 MOTOROLA FAST SRAM MCM6341 1 PIN ASSIGNMENT 1 A B C D E DQ F G DQ H DQ J K L M DQ N P R T NC U NC A A A A W G A A A A NC NC DQ DQ DQ VDD VSS VDD NC VSS VDD VSS NC VSS VSS VSS NC VSS VDD VSS NC VDD VSS VDD NC DQ DQ DQ DQ VDD DQ DQ VDD VSS VDD VSS VSS VDD VSS VDD VSS VSS VSS VSS VSS VDD VSS VDD VDD VSS VDD VSS DQ VDD DQ DQ VSS VDD VSS VDD VSS DQ DQ VSS VDD VDD VSS VSS VSS VDD VSS VSS VDD DQ DQ NC NC DQ DQ 2 A A NC VDD 3 A A E2 VSS 4 A E1 NC VSS 5 A A E3 VSS 6 A A NC VDD 7 NC NC DQ DQ 119-BUMP PBGA TOP VIEW MCM6341 2 MOTOROLA FAST SRAM TRUTH TABLE (X = Don't Care) E1 H X X L L L E2 X L X H H H E3 X X H L L L G X X X H L X W X X X H H L Mode Not Selected Not Selected Not Selected Output Disabled Read Write I/O Pin High-Z High-Z High-Z High-Z Dout High-Z Cycle -- -- -- -- Read Write Current ISB1, ISB2 ISB1, ISB2 ISB1, ISB2 IDDA IDDA IDDA ABSOLUTE MAXIMUM RATINGS (See Note) Rating Power Supply Voltage Relative to VSS Voltage Relative to VSS for Any Pin Except VDD Output Current (per I/O) Power Dissipation Temperature Under Bias Commercial Industrial Symbol VDD Vin, Vout Iout PD Tbias Tstg Value - 0.5 to + 5.0 - 0.5 to VDD + 0.5 20 1.0 - 10 to + 85 - 45 to + 90 - 55 to + 150 Unit V V mA W C C This device contains circuitry to protect the inputs against damage due to high static voltages or electric fields; however, it is advised that normal precautions be taken to avoid application of any voltage higher than maximum rated voltages to these high-impedance circuits. This CMOS memory circuit has been designed to meet the dc and ac specifications shown in the tables, after thermal equilibrium has been established. The circuit is in a test socket or mounted on a printed circuit board and transverse air flow of at least 500 linear feet per minute is maintained. Storage Temperature -- Plastic NOTE: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to RECOMMENDED OPERATING CONDITIONS. Exposure to higher than recommended voltages for extended periods of time could affect device reliability. MOTOROLA FAST SRAM MCM6341 3 DC OPERATING CONDITIONS AND CHARACTERISTICS (VDD = 3.3 V 10%, TA = 0 to + 70C, Unless Otherwise Noted) (TA = - 40 to + 85C for Industrial Temperature Offering) RECOMMENDED OPERATING CONDITIONS Parameter Supply Voltage (Operating Voltage Range) Input High Voltage Input Low Voltage Symbol VDD VIH VIL Min 3.0 2.2 - 0.5* Typ 3.3 -- -- Max 3.6 VDD + 0.3** 0.8 Unit V V V * VIL (min) = - 0.5 V dc; VIL (min) = - 2.0 V ac (pulse width 2.0 ns). ** VIH (max) = VDD + 0.3 V dc; VIH (max) = VDD + 2.0 V ac (pulse width 2.0 ns). DC CHARACTERISTICS (See Note) Parameter Input Leakage Current (All Inputs, Vin = 0 to VDD) Output Leakage Current (E = VIH, Vout = 0 to VDD) Output Low Voltage (IOL = + 8.0 mA) Output High Voltage (IOH = - 4.0 mA) Symbol Ilkg(I) Ilkg(O) VOL VOH Min -- -- -- 2.4 Max 1.0 1.0 0.4 -- Unit A A V V NOTE: E1, E2, and E3 are represented by E in this data sheet. E2 is of opposite polarity to E1 and E3. POWER SUPPLY CURRENTS (See Note) Parameter AC Active Supply Current (Iout = 0 mA, VDD = max) MCM6341-10 MCM6341-11 MCM6341-12 MCM6341-15 MCM6341-10 MCM6341-11 MCM6341-12 MCM6341-15 Symbol IDD 0 to 70C 280 275 270 260 50 50 50 45 20 - 40 to + 85C 290 285 280 270 55 55 55 50 20 Unit mA AC Standby Current (VDD = max, E = VIH, No other restrictions on other inputs) ISB1 mA CMOS Standby Current (E VDD - 0.2 V, Vin VSS + 0.2 V or VDD - 0.2 V) (VDD = max, f = 0 MHz) ISB2 mA NOTE: E1, E2, and E3 are represented by E in this data sheet. E2 is of opposite polarity to E1 and E3. CAPACITANCE (f = 1.0 MHz, dV = 3.0 V, TA = 25C, Periodically Sampled Rather Than 100% Tested) Parameter Input Capacitance Input/Output Capacitance All Inputs Except Clocks and DQs E, G, W DQ Symbol Cin Cck CI/O Typ 4 5 5 Max 6 8 8 Unit pF pF MCM6341 4 MOTOROLA FAST SRAM AC OPERATING CONDITIONS AND CHARACTERISTICS (VDD = 3.3 V 10%, TA = 0 to + 70C, Unless Otherwise Noted) (TA = - 40 to + 85C for Industrial Temperature Offering) Input Pulse Levels . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0 to 3.0 V Input Rise/Fall Time . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 ns Input Timing Measurement Reference Level . . . . . . . . . . . . . . . 1.5 V Output Timing Measurement Reference Level . . . . . . . . . . . . . 1.5 V Output Load . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . See Figure 1 READ CYCLE TIMING (See Notes 1, 2, and 3) MCM6341-10 Parameter P Read Cycle Time Address Access Time Enable Access Time Output Enable Access Time Output Hold from Address Change Enable Low to Output Active Output Enable Low to Output Active Enable High to Output High-Z Output Enable High to Output High-Z Symbol S bl tAVAV tAVQV tELQV tGLQV tAXQX tELQX tGLQX tEHQZ tGHQZ Min 10 -- -- -- 3 3 0 0 0 Max -- 10 10 5 -- -- -- 5 5 MCM6341-11 Min 11 -- -- -- 3 3 0 0 0 Max -- 11 11 6 -- -- -- 6 6 MCM6341-12 Min 12 -- -- -- 3 3 0 0 0 Max -- 12 12 6 -- -- -- 6 6 MCM6341-15 Min 15 -- -- -- 3 3 0 0 0 Max -- 15 15 7 -- -- -- 7 7 Unit Ui ns ns ns ns ns ns ns ns ns 6, 7, 8 6, 7, 8 6, 7, 8 6, 7, 8 5 Notes N 4 NOTES: 1. W is high for read cycle. 2. Product sensitivities to noise require proper grounding and decoupling of power supplies as well as minimization or elimination of bus contention conditions during read and write cycles. 3. E1, E2, and E3 are represented by E in this data sheet. E2 is of opposite polarity to E1 and E3. 4. All read cycle timings are referenced from the last valid address to the first transitioning address. 5. Addresses valid prior to or coincident with E going low. 6. At any given voltage and temperature, tEHQZ max tELQX min, and tGHQZ max tGLQX min, both for a given device and from device to device. 7. Transition is measured 200 mV from steady-state voltage. 8. This parameter is sampled and not 100% tested. 9. Device is continuously selected (E VIL, G VIL). t t RL = 50 OUTPUT Z0 = 50 VL = 1.5 V Figure 1. AC Test Load MOTOROLA FAST SRAM MCM6341 5 READ CYCLE 1 (See Note 9) tAVAV A (ADDRESS) tAXQX Q (DATA OUT) PREVIOUS DATA VALID tAVQV DATA VALID READ CYCLE 2 (See Notes 3 and 5) tAVAV A (ADDRESS) tELQV E (CHIP ENABLE) tELQX G (OUTPUT ENABLE) tGLQV tGLQX Q (DATA OUT) HIGH-Z tAVQV SUPPLY CURRENT IDD ISB DATA VALID tGHQZ tEHQZ MCM6341 6 MOTOROLA FAST SRAM WRITE CYCLE 1 (W Controlled; See Notes 1, 2, 3, and 4) MCM6341-10 Parameter P Write Cycle Time Address Setup Time Address Valid to End of Write Address Valid to End of Write (G High) Write Pulse Width Write Pulse Width (G High) Data Valid to End of Write Data Hold Time Write Low to Data High-Z Write High to Output Active Write Recovery Time Symbol S bl tAVAV tAVWL tAVWH tAVWH tWLWH tWLEH tWLWH tWLEH tDVWH tWHDX tWLQZ tWHQX tWHAX Min 10 0 9 8 9 8 4 0 0 3 0 Max -- -- -- -- -- -- -- -- 5 -- -- MCM6341-11 Min 11 0 10 9 10 9 5 0 0 3 0 Max -- -- -- -- -- -- -- -- 6 -- -- MCM6341-12 Min 12 0 10 9 10 9 5 0 0 3 0 Max -- -- -- -- -- -- -- -- 6 -- -- MCM6341-15 Min 15 0 12 10 12 10 6 0 0 3 0 Max -- -- -- -- -- -- -- -- 7 -- -- Unit Ui ns ns ns ns ns ns ns ns ns ns ns 6, 7, 8 6, 7, 8 Notes N 5 NOTES: 1. A write occurs during the overlap of E low and W low. 2. Product sensitivities to noise require proper grounding and decoupling of power supplies as well as minimization or elimination of bus contention conditions during read and write cycles. 3. If G goes low coincident with or after W goes low, the output will remain in a high-impedance state. 4. E1, E2, and E3 are represented by E in this data sheet. E2 is of opposite polarity to E1 and E3. 5. All write cycle timings are referenced from the last valid address to the first transitioning address. 6. Transition is measured 200 mV from steady-state voltage. 7. This parameter is sampled and not 100% tested. 8. At any given voltage and temperature, tWLQZ max < tWHQX min both for a given device and from device to device. WRITE CYCLE 1 (W Controlled; See Notes 1, 2, 3, and 4) tAVAV A (ADDRESS) tAVWH E (CHIP ENABLE) tWLWH tWLEH W (WRITE ENABLE) tAVWL D (DATA IN) tWLQZ Q (DATA OUT) HIGH-Z HIGH-Z tDVWH DATA VALID tWHQX tWHDX tWHAX MOTOROLA FAST SRAM MCM6341 7 WRITE CYCLE 2 (E Controlled; See Notes 1, 2, 3, and 4) MCM6341-10 Parameter P Write Cycle Time Address Setup Time Address Valid to End of Write Address Valid to End of Write (G High) Enable Pulse Width Enable Pulse Width (G High) Data Valid to End of Write Data Hold Time Write Recovery Time Symbol S bl tAVAV tAVEL tAVEH tAVEH tELEH, tELWH tELEH, tELWH tDVEH tEHDX tEHAX Min 10 0 9 8 9 8 4 0 0 Max -- -- -- -- -- -- -- -- -- MCM6341-11 Min 11 0 10 9 10 9 5 0 0 Max -- -- -- -- -- -- -- -- -- MCM6341-12 Min 12 0 10 9 10 9 5 0 0 Max -- -- -- -- -- -- -- -- -- MCM6341-15 Min 15 0 12 10 12 10 6 0 0 Max -- -- -- -- -- -- -- -- -- Unit Ui ns ns ns ns ns ns ns ns ns 6, 7 6, 7 Notes N 5 NOTES: 1. A write occurs during the overlap of E low and W low. 2. Product sensitivities to noise require proper grounding and decoupling of power supplies as well as minimization or elimination of bus contention conditions during read and write cycles. 3. If G goes low coincident with or after W goes low, the output will remain in a high-impedance state. 4. E1, E2, and E3 are represented by E in this data sheet. E2 is of opposite polarity to E1 and E3. 5. All write cycle timing is referenced from the last valid address to the first transitioning address. 6. If E goes low coincident with or after W goes low, the output will remain in a high-impedance condition. 7. If E goes high coincident with or before W goes high, the output will remain in a high-impedance condition. WRITE CYCLE 2 (E Controlled; See Notes 1, 2, 3, and 4) tAVAV A (ADDRESS) tAVEH tELEH E (CHIP ENABLE) tAVEL W (WRITE ENABLE) tDVEH D (DATA IN) DATA VALID tEHDX Q (DATA OUT) HIGH-Z tELWH tEHAX MCM6341 8 MOTOROLA FAST SRAM ORDERING INFORMATION (Order by Full Part Number) xCM Motorola Memory Prefix Part Number 6341 XX XX XX Shipping Method (PBGA Standard) Speed (10 = 10 ns, 11 = 11 ns, 12 = 12 ns, 15 = 15 ns) Package (ZP = PBGA) Full Commercial Part Numbers -- MCM6341ZP10 MCM6341ZP11 MCM6341ZP12 MCM6341ZP15 Full Industrial Temperature Part Numbers -- SCM6341ZP10A SCM6341ZP12A SCM6341ZP15A PACKAGE DIMENSIONS ZP PACKAGE 119-PBGA CASE 999-02 4X 0.20 119X C E B 7 6 54 3 2 1 A B C D E F G H J K L M N P R T U b 0.3 0.15 M M ABC A D2 D D1 16X e NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. ALL DIMENSIONS IN MILLIMETERS. 3. DIMENSION b IS THE MAXIMUM SOLDER BALL DIAMETER MEASURED PARALLEL TO DATUM A. 4. DATUM A, THE SEATING PLANE, IS DEFINED BY THE SPHERICAL CROWNS OF THE SOLDER BALLS. DIM A A1 A2 A3 D D1 D2 E E1 E2 b e MILLIMETERS MIN MAX --- 2.40 0.50 0.70 1.30 1.70 0.80 1.00 22.00 BSC 20.32 BSC 19.40 19.60 14.00 BSC 7.62 BSC 11.90 12.10 0.60 0.90 1.27 BSC E2 TOP VIEW 6X e E1 BOTTOM VIEW 0.25 A A3 0.35 A 0.20 A A A2 SIDE VIEW SEATING PLANE A1 A MOTOROLA FAST SRAM MCM6341 9 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado, 80217. 1-303-675-2140 or 1-800-441-2447 JAPAN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, 141, 4-32-1 Nishi-Gotanda, Shagawa-ku, Tokyo, Japan. 03-5487-8488 MfaxTM : RMFAX0@email.sps.mot.com - TOUCHTONE 1-602-244-6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, Motorola Fax Back System - US & Canada ONLY 1-800-774-1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 - http://sps.motorola.com /mfax / HOME PAGE : http://motorola.com/sps / CUSTOMER FOCUS CENTER: 1-800-521-6274 MCM6341 10 MCM6341/D MOTOROLA FAST SRAM |
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